Linear Thermal Expansion Measurements of Single Crystal Silicon for Validation of Interferometer Based Cryogenic Dilatometer

P. Karlmann, K. Klein, P. Halverson, R. Peters, M. Levine, D. Buren, M. Dudik
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引用次数: 12

Abstract

Linear thermal expansion measurements were performed for high‐purity P‐type single crystal silicon over a temperature range of 30K to 310K to validate the accuracy of JPL’s interferometer‐based Cryogenic Dilatometer Facility. This system was developed to better characterize thermophysical properties of precision engineering materials at cryogenic temperatures for space‐based optical systems. An accurate measurement of these properties is critical for the success of missions such as the James Webb Space Telescope and the Terrestrial Planet Finder Coronagraph where picometer‐level instabilities and thermal deformations impact performance. Results from these single crystal silicon measurements show a mean system repeatability of 4 ppb/K in the coefficient of thermal expansion (CTE) from 35K to 305K. Comparison with NIST/CODATA recommended values shows agreement of better than 2 ppb/K from 30K to 80K, better than 11 ppb/K from 80K to 165K, and better than 2 ppb/K from 165K to 305K.
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单晶硅线性热膨胀测量对干涉仪低温膨胀仪的验证
在30K至310K的温度范围内对高纯度P型单晶硅进行了线性热膨胀测量,以验证JPL基于干涉仪的低温膨胀仪设备的准确性。该系统的开发是为了更好地表征空间光学系统中精密工程材料在低温下的热物理特性。这些特性的精确测量对于詹姆斯韦伯太空望远镜和类地行星探测日冕仪等任务的成功至关重要,其中皮米级的不稳定性和热变形会影响性能。这些单晶硅测量结果表明,在35K至305K的热膨胀系数(CTE)中,平均系统重复性为4 ppb/K。与NIST/CODATA推荐值的比较显示,从30K到80K的一致性优于2 ppb/K,从80K到165K的一致性优于11 ppb/K,从165K到305K的一致性优于2 ppb/K。
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