Dong-Ju Bai, A. Baba, 馬場 昭好, A. Kenjo, 権丈 淳, T. Sadoh, 佐道 泰造, T. Sado, H. Nakashima, 中島 寛, H. Mori, T. Tsurushima, 鶴島 稔夫, ババ アキヨシ, アツシ ケンジョウ, タイゾウ サドウ, ヒロシ ナカシマ, モリ ヒロシ, トシオ ツルシマ
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Abstract
Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.
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Research Reports on Information Science and Electrical Engineering of Kyushu University provides quick publication in English or in Japanese on the most recent findings and achievements in the Faculty of Information Science and Electrical Engineering, Kyushu University.
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