Effects of different growth temperatures towards indium incorporation in InGaN quantum well heterostructure

IF 0.3 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY International Journal of Nanotechnology Pub Date : 2022-01-01 DOI:10.1504/ijnt.2022.124513

Mahmoud Seliman, Z. Hassan, A. S. Yusof, M. A. Ahmad, N. Hamzah, R. Asri, M. Taib, M. Baharin

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不同生长温度对铟掺杂在InGaN量子阱异质结构中的影响

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来源期刊

International Journal of Nanotechnology 工程技术-材料科学：综合

CiteScore

0.60

自引率

20.00%

发文量

审稿时长

6-12 weeks

期刊介绍： IJNT offers a multidisciplinary source of information in all subjects and topics related to Nanotechnology, with fundamental, technological, as well as societal and educational perspectives. Special issues are regularly devoted to research and development of nanotechnology in individual countries and on specific topics.

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