Zheng Sun, Hanli Liu, Dingxin Xu, Hongye Huang, Bangan Liu, Zheng Li, Jian Pang, T. Someya, A. Shirane, K. Okada
{"title":"A Low-Jitter Injection-Locked Clock Multiplier Using 97-μW Transformer-Based VCO with 18-kHz Flicker Noise Corner","authors":"Zheng Sun, Hanli Liu, Dingxin Xu, Hongye Huang, Bangan Liu, Zheng Li, Jian Pang, T. Someya, A. Shirane, K. Okada","doi":"10.1587/TRANSELE.2020CDP0005","DOIUrl":null,"url":null,"abstract":"SUMMARY This paper presents a high jitter performance injection- locked clock multiplier (ILCM) using an ultra-low power (ULP) voltage-controlled oscillator (VCO) for IoT application in 65-nm CMOS. The proposed transformer-based VCO achieves low flicker noise corner and sub-100 (cid:181) W power consumption. Double cross-coupled NMOS transistors sharing the same current provide high transconductance. The network using high-Q factor transformer (TF) provides a large tank impedance to min- imize the current requirement. Thanks to the low current bias with a small conduction angle in the ULP VCO design, the proposed TF-based VCO’s flicker noise can be suppressed, and a good PN can be achieved in flicker region (1 / f 3 ) with sub-100 (cid:181) W power consumption. Thus, a high figure-of- merit (FoM) can be obtained at both 100kHz and 1MHz without additional inductor. The proposed VCO achieves phase noise of -94.5 / -115.3dBc / Hz at 100kHz / 1MHz frequency o ff set with a 97 (cid:181) W power consumption, which corresponds to a -193 / -194dBc / Hz VCO FoM at 2.62GHz oscil- lation frequency. The measurement results show that the 1 / f 3 corner is below 60kHz over the tuning range from 2.57GHz to 3.40GHz. Thanks to the proposed low power VCO, the total ILCM achieves 78fs RMS jitter while using a high reference clock. A 960fs RMS jitter can be achieved with a 40MHz common reference and 107 (cid:181) W corresponding power.","PeriodicalId":50384,"journal":{"name":"IEICE Transactions on Electronics","volume":"75 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Transactions on Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1587/TRANSELE.2020CDP0005","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
SUMMARY This paper presents a high jitter performance injection- locked clock multiplier (ILCM) using an ultra-low power (ULP) voltage-controlled oscillator (VCO) for IoT application in 65-nm CMOS. The proposed transformer-based VCO achieves low flicker noise corner and sub-100 (cid:181) W power consumption. Double cross-coupled NMOS transistors sharing the same current provide high transconductance. The network using high-Q factor transformer (TF) provides a large tank impedance to min- imize the current requirement. Thanks to the low current bias with a small conduction angle in the ULP VCO design, the proposed TF-based VCO’s flicker noise can be suppressed, and a good PN can be achieved in flicker region (1 / f 3 ) with sub-100 (cid:181) W power consumption. Thus, a high figure-of- merit (FoM) can be obtained at both 100kHz and 1MHz without additional inductor. The proposed VCO achieves phase noise of -94.5 / -115.3dBc / Hz at 100kHz / 1MHz frequency o ff set with a 97 (cid:181) W power consumption, which corresponds to a -193 / -194dBc / Hz VCO FoM at 2.62GHz oscil- lation frequency. The measurement results show that the 1 / f 3 corner is below 60kHz over the tuning range from 2.57GHz to 3.40GHz. Thanks to the proposed low power VCO, the total ILCM achieves 78fs RMS jitter while using a high reference clock. A 960fs RMS jitter can be achieved with a 40MHz common reference and 107 (cid:181) W corresponding power.
期刊介绍:
Currently, the IEICE has ten sections nationwide. Each section operates under the leadership of a section chief, four section secretaries and about 20 section councilors. Sections host lecture meetings, seminars and industrial tours, and carry out other activities.
Topics:
Integrated Circuits, Semiconductor Materials and Devices, Quantum Electronics, Opto-Electronics, Superconductive Electronics, Electronic Displays, Microwave and Millimeter Wave Technologies, Vacuum and Beam Technologies, Recording and Memory Technologies, Electromagnetic Theory.