Folded down-conversion mixer for a 60 GHz receiver architecture in 65-nm CMOS technology

Najam Muhammad Amin, Zhigong Wang, Zhiqun Li
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引用次数: 2

Abstract

We present the design of a folded down-conversion mixer which is incorporated at the final down-conversion stage of a 60 GHz receiver. The mixer employs an ac-coupled current reuse transconductance stage. It performs well under low supply voltages, and is less sensitive to temperature variations and process spread. The mixer operates at an input radio frequency (RF) band ranging from 10.25 to 13.75 GHz, with a fixed local oscillator (LO) frequency of 12 GHz, which down-converts the RF band to an intermediate frequency (IF) band ranging from dc to 1.75 GHz. The mixer is designed in a 65 nm low power (LP) CMOS process with an active chip area of only 0.0179 mm2. At a nominal supply voltage of 1.2 V and an IF of 10 MHz, a maximum voltage conversion gain (VCG) of 9.8 dB, a double sideband noise figure (DSB-NF) of 11.6 dB, and a linearity in terms of input 1 dB compression point (Pin,1dB) of −13 dBm are measured. The mixer draws a current of 5 mA from a 1.2 V supply dissipating a power of only 6 mW.
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采用65纳米CMOS技术的60 GHz接收器架构的折叠下转换混频器
我们设计了一种折叠下变频混频器,该混频器集成在60 GHz接收机的最后下变频阶段。混合器采用交流耦合电流复用跨导级。它在低电源电压下表现良好,并且对温度变化和工艺扩散不太敏感。混频器工作在10.25至13.75 GHz的输入射频(RF)频段,固定的本振(LO)频率为12 GHz,将RF频段下变频到直流至1.75 GHz的中频(IF)频段。该混频器采用65纳米低功耗(LP) CMOS工艺设计,有效芯片面积仅为0.0179 mm2。在标称电源电压为1.2 V,中频为10 MHz时,测量到的最大电压转换增益(VCG)为9.8 dB,双边带噪声系数(DSB-NF)为11.6 dB,输入1dB压缩点(引脚,1dB)线性度为- 13 dBm。混合器从1.2 V电源吸取5 mA电流,耗散功率仅为6 mW。
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