Magnetic Properties of Iron Nitride Thin Films Prepared by the Magnetron Discharge Method

IEEE Translation Journal on Magnetics in Japan Pub Date : 1994-09-01 DOI:10.1109/TJMJ.1994.4565931

K. Niizuma;Y. Shato;Y. Utsushikawa

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引用次数: 7

Abstract

The saturation magnetization M _s of polycrystalline iron thin films increased by approximately 10% after films were subjected to ion nitriding treatment for about one hour. In the latter treatment, the magnetron discharge method was used to increase the energy density of the discharge. The rate of increase of M _s was 21.2% after the iron thin film was nitrided under an N ₂ gas pressure of 4.5×10 ^-2 Torr. X-ray diffraction studies revealed the presence of Fe ₁₆ N ₂ , γ'-Fe ₄ N, ε-Fe ₃ N, ζ-Fe ₂ N, and α-Fe phases in thin films nitrided under various N ₂ gas pressures. The saturation magnetization M _s of Fe ₁₆ N ₂ , calculated using X-ray integrated intensity ratios, was 2210 emu/cc in nitrided thin films under an N ₂ gas pressure of 4.5×10 ^-2 Torr, and the M _s of Fe ₁₆ N ₂ , calculated using X-ray integrated intensity ratios, was 1710 emu/cc for thin film nitrided under an N ₂ gas pressure of 7.5×10 ^-2 Torr.

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磁控放电法制备氮化铁薄膜的磁性能

在对多晶铁薄膜进行约1小时的离子氮化处理后，其饱和磁化强度Ms增加了约10%。在后一种处理中，使用磁控管放电方法来增加放电的能量密度。在4.5×10-2Torr的N2气压下氮化铁薄膜后，Ms的增加率为21.2%。X射线衍射研究表明，在不同N2气压下氮化的薄膜中存在Fe16N2、γ′-Fe4N、ε-Fe3N、ζ-Fe2N和α-Fe相。在4.5×10-2 Torr的N2气压下氮化的薄膜中，使用X射线积分强度比计算的Fe16N2的饱和磁化强度Ms为2210 emu/cc，并且在7.5×10-2托尔的N2气压条件下氮化的膜中，使用X射线积分强度比计算的Fe16 N2的Ms为1710 emu/cc。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Translation Journal on Magnetics in Japan

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