Electronically Tunable Flux-Controlled Resistorless Memristor Emulator

IF 1.9 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Canadian Journal of Electrical and Computer Engineering Pub Date : 2022-08-31 DOI:10.1109/ICJECE.2022.3182711
Sagar;Niranjan Raj;Vijay Kumar Verma;Rajeev Kumar Ranjan
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引用次数: 1

Abstract

This article demonstrates a voltage differencing inverting buffered amplifier (VDIBA)-based resistorless flux-controlled memristor emulator circuit with tunability. Two VDIBA blocks serve as active components, and a grounded capacitor serving as a passive part. The proposed emulator design is devoid of multipliers and resistors through effective utilization of port relationships. Including tunability, the suggested emulator functions in both incremental and decremental modes. It accurately depicts the attributes of an ideal memristor up to 12.7 MHz and consumes a total power of 1.34 mW. The mathematical analysis is substantiated through Cadence simulation in 0.18- $\mu \text{m}$ Taiwan Semiconductor Manufacturing Company (TSMC) technology with the supply voltage of ±1 V. Nonideal, single/parallel, Monte-Carlo sampling and corner analysis were conducted to confirm circuit resilience. The nonvolatile nature of the presented emulator model has also been included. A breadboard prototype incorporating the ICs CA3080 and LT1193 are built to conduct an experimental demonstration. The experimental findings were consistent with the theoretical expectations and simulation results.
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电子可调谐流量控制无电阻忆阻器模拟器
本文介绍了一种可调谐的基于电压差分反相缓冲放大器(VDIBA)的无电阻磁通控制忆阻器仿真电路。两个VDIBA块用作有源部件,一个接地电容器用作无源部件。通过有效利用端口关系,所提出的模拟器设计没有乘法器和电阻器。包括可调谐性在内,建议的模拟器在递增和递减模式下都能工作。它准确地描绘了高达12.7 MHz的理想忆阻器的属性,并且消耗了1.34 mW的总功率。通过在0.18-$\mu\text{m}$台湾半导体制造公司(TSMC)技术中的Cadence模拟,在±1 V的电源电压下,进行蒙特卡罗采样和拐角分析以确认电路弹性。还包括了所提出的模拟器模型的非易失性。构建了一个包含集成电路CA3080和LT1193的试验板原型,以进行实验演示。实验结果与理论预期和模拟结果一致。
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