Study on mechanisms of microwave synthesis of SiC crystal from sheet carbon source

IF 0.9 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS Processing and Application of Ceramics Pub Date : 2022-01-01 DOI:10.2298/pac2203283s
Bozhen Song, Chenjiang Dong, Xinyue Zhang, B. Fan, Jingqing Gao, Rui Zhang
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Abstract

Needle-like SiC whiskers were synthesised by microwave heating using graphite sheets and tetraethoxysilane (TEOS) as raw materials. It was found that SiC powder could be synthesised at 1000?C for 10min, lower than that of samples made from a granular C source. Furthermore, the heating rate of the samples made with graphite sheets was higher than that of a granular C source. The main morphology of the SiC whiskers was needle-like, which appeared when samples were heated at 1200?C for 10min. Size of the SiC whiskers made with graphite sheets was more uniform than that of a granular C source, which was attributed to the 2D thermal effect. Moreover, the size and the amount of the SiC whiskers increased as the heating temperature increased from 1200 to 1400?C for 10min. The SiC whiskers were oxidised and decomposed into SiC particles when heated to 1500?C for 10min and only SiC particles existed when longer holding times were used.
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片状碳源微波合成SiC晶体机理研究
以石墨片和四乙氧基硅烷(TEOS)为原料,采用微波加热法制备了针状SiC晶须。结果表明,在1000℃下可合成SiC粉末。C作用10min,低于颗粒状C源制备的样品。此外,用石墨片制成的样品的升温速率高于颗粒状碳源。SiC晶须的主要形貌为针状,在1200℃加热时出现。C加热10分钟。石墨片碳化硅晶须的尺寸比颗粒型碳化硅晶须的尺寸更均匀,这是二维热效应的结果。随着加热温度从1200℃升高到1400℃,SiC晶须的尺寸和数量均有所增加。C加热10分钟。当加热到1500℃时,碳化硅晶须被氧化分解成碳化硅颗粒。C保温10min,保温时间越长,只存在SiC颗粒。
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来源期刊
Processing and Application of Ceramics
Processing and Application of Ceramics MATERIALS SCIENCE, CERAMICS-
CiteScore
1.90
自引率
9.10%
发文量
14
审稿时长
10 weeks
期刊介绍: Information not localized
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