Shuang Zhao, Feiyue Yang, Jun Chen, Kunfeng Li, Zhifang Fei, Zichun Yang
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引用次数: 0
Abstract
?-Si3N4 nanowires with diameters of 100-180 nm (Si3N4-W1) and 420-510 nm (Si3N4-W2) were synthesized by a modified chemical vapour deposition (CVD) method and their microstructure changes after high-temperature oxidation were studied. The results showed that both Si3N4 nanowires were not significantly oxidized when the temperature was lower than 900?C. However, the Si3N4-W1 microstructure began to change significantly after oxidation at 1200?C, while the Si3N4-W2 microstructure remained almost unchanged. Moreover, the Si3N4- W1 and Si3N4-W2 nanowires oxidized significantly after treatment at 1400?C, with weight gain of 26.4% and 13.7%, respectively.
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