Large Signal Equivalent Circuit Model for Package AlGaN/GaN HEMT

Abstract

In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating efiect, has been presented, and good agreements are achieved between measurement results and calculated results at difierent temperatures. The nonlinear capacitance models are modeled directly by measured microwave scattering (S) parameters and multi-bias small signal equivalent circuit model (SSECM) of package device is also established based on the measurements. A power amplifler based on large size AlGaN/GaN HEMT with a total gate periphery of 36mm has been designed by using the proposed model for validation purpose, and the simulation results flt the measurement results well at difierent temperatures.