Recognition and Visualization of Lithography Defects based on Transfer Learning

Bo Liu, Pengzheng Gao, Libin Zhang, Jiajin Zhang, Yuhong Zhao, Yayi Wei
{"title":"Recognition and Visualization of Lithography Defects based on Transfer Learning","authors":"Bo Liu, Pengzheng Gao, Libin Zhang, Jiajin Zhang, Yuhong Zhao, Yayi Wei","doi":"10.33079/jomm.20030302","DOIUrl":null,"url":null,"abstract":": Yield control in the integrated circuit manufacturing process is very important, and defects are one of the main factors affecting chip yield. As the process control becomes more and more critical and the critical dimension becomes smaller and smaller, the identification and location of defects is particularly important. This paper uses a machine learning algorithm based on transfer learning and two fine-tuned neural network models to realize the autonomous recognition and classification of defects even the data set is small, which achieves 94.6% and 91.7% classification accuracy. The influence of network complexity on classification result is studied at the same time. This paper also establishes a visual display algorithm of defects, shows the process of extracting the deep-level features of the defective image by the network, and then analyze the defect features. Finally, the Gradient-weighted Class Activation Mapping technology is used to generate defect heat maps, which locate the defect positions and probability intensity effects. This paper greatly expands the application of transfer learning in the field of integrated circuit lithography defect recognition, and greatly improves the friendliness of defect display.","PeriodicalId":66020,"journal":{"name":"微电子制造学报","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"微电子制造学报","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.33079/jomm.20030302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

: Yield control in the integrated circuit manufacturing process is very important, and defects are one of the main factors affecting chip yield. As the process control becomes more and more critical and the critical dimension becomes smaller and smaller, the identification and location of defects is particularly important. This paper uses a machine learning algorithm based on transfer learning and two fine-tuned neural network models to realize the autonomous recognition and classification of defects even the data set is small, which achieves 94.6% and 91.7% classification accuracy. The influence of network complexity on classification result is studied at the same time. This paper also establishes a visual display algorithm of defects, shows the process of extracting the deep-level features of the defective image by the network, and then analyze the defect features. Finally, the Gradient-weighted Class Activation Mapping technology is used to generate defect heat maps, which locate the defect positions and probability intensity effects. This paper greatly expands the application of transfer learning in the field of integrated circuit lithography defect recognition, and greatly improves the friendliness of defect display.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于迁移学习的光刻缺陷识别与可视化
在集成电路制造过程中良率控制非常重要,而缺陷是影响芯片良率的主要因素之一。随着过程控制变得越来越关键,关键尺寸越来越小,缺陷的识别和定位就显得尤为重要。本文采用一种基于迁移学习的机器学习算法和两种微调神经网络模型,在数据集较小的情况下实现缺陷的自主识别和分类,分类准确率分别达到94.6%和91.7%。同时研究了网络复杂度对分类结果的影响。本文还建立了缺陷的视觉显示算法,展示了利用网络提取缺陷图像的深层特征的过程,并对缺陷特征进行了分析。最后,利用梯度加权类激活映射技术生成缺陷热图,对缺陷位置和概率强度效应进行定位。本文极大地拓展了迁移学习在集成电路光刻缺陷识别领域的应用,极大地提高了缺陷显示的友好性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
46
审稿时长
4 weeks
期刊最新文献
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist Patterning with Organized Molecules New Progress of China's Integrated Circuit Design Industry Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment Influence of Chemical Stability on the Fabrication of MnGa-based Devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1