Denir Paganini Nascimento, M. Martorano, Caio Cesar Cebalos de Almeida, A. F. Padilha
{"title":"Measurements of hardness, young s modulus, and fracture toughness of solar grade silicon obtained from metallurgical grade silicon","authors":"Denir Paganini Nascimento, M. Martorano, Caio Cesar Cebalos de Almeida, A. F. Padilha","doi":"10.4322/2176-1523.20222726","DOIUrl":null,"url":null,"abstract":"Young modulus and toughness (K IC ) of bulk solar grade silicon (SoG-Si) obtained by directional solidification of metallurgical grade silicon were determined. The Young modulus was measured by the technique of impulse excitation of vibration and K IC was determined using the indentation method. Measurement values agree well with those available in the literature. The indentation method proved to be a reliable, relatively simple, inexpensive, and fast experimental method to measure K IC in SoG-Si.","PeriodicalId":53327,"journal":{"name":"Tecnologia em Metalurgia Materiais e Mineracao","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tecnologia em Metalurgia Materiais e Mineracao","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4322/2176-1523.20222726","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Young modulus and toughness (K IC ) of bulk solar grade silicon (SoG-Si) obtained by directional solidification of metallurgical grade silicon were determined. The Young modulus was measured by the technique of impulse excitation of vibration and K IC was determined using the indentation method. Measurement values agree well with those available in the literature. The indentation method proved to be a reliable, relatively simple, inexpensive, and fast experimental method to measure K IC in SoG-Si.
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