{"title":"New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature","authors":"A. Touati, S. Chatbouri, N. Sghaier, A. Kalboussi","doi":"10.4236/WJNSE.2012.24022","DOIUrl":null,"url":null,"abstract":"We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.","PeriodicalId":66816,"journal":{"name":"纳米科学与工程(英文)","volume":"02 1","pages":"171-175"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"纳米科学与工程(英文)","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.4236/WJNSE.2012.24022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.
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