{"title":"Oxidation kinetics of hot-pressed silicon nitride","authors":"G.N. Babini, P. Vincenzini","doi":"10.1016/0390-6035(82)90101-8","DOIUrl":null,"url":null,"abstract":"<div><p>A simplified model for evaluation of hot-pressed silicon nitride (HPSN) has been derived which accounts for the amount and type of grain boundary phase and for the composition at the Si<sub>3</sub>N<sub>4</sub>/oxide reaction interface. The model proved suitable for explaining the oxidation behaviour of a wide range of materials including MgO, CeO<sub>2</sub>, (CeO<sub>2</sub> + SiO<sub>2</sub>), (Y<sub>2</sub>O<sub>3</sub> + SiO<sub>2</sub>), (MgO + Y<sub>2</sub>O<sub>3</sub>) additives. Some deductions are also possible on how to improve the oxidation resistance of HPSN.</p></div>","PeriodicalId":18221,"journal":{"name":"Materials Chemistry","volume":"7 6","pages":"Pages 773-785"},"PeriodicalIF":0.0000,"publicationDate":"1982-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0390-6035(82)90101-8","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0390603582901018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A simplified model for evaluation of hot-pressed silicon nitride (HPSN) has been derived which accounts for the amount and type of grain boundary phase and for the composition at the Si3N4/oxide reaction interface. The model proved suitable for explaining the oxidation behaviour of a wide range of materials including MgO, CeO2, (CeO2 + SiO2), (Y2O3 + SiO2), (MgO + Y2O3) additives. Some deductions are also possible on how to improve the oxidation resistance of HPSN.