{"title":"A boundary determined Auger recombination model for semiconductor power diodes","authors":"I.A. Henderson, J. McGhee","doi":"10.1016/0270-0255(87)90590-2","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":100895,"journal":{"name":"Mathematical Modelling","volume":"8 ","pages":"279-282"},"PeriodicalIF":0.0000,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0270-0255(87)90590-2","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical Modelling","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0270025587905902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
半导体功率二极管的边界确定Auger复合模型
使用任意结和对称PIN半导体二极管来获得边界确定的电流密度的方程。结果表明，电流密度在很大程度上取决于结两侧的载流子密度梯度。扩散方程的载流子密度梯度解允许根据边界条件检查体区俄歇复合。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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