{"title":"1/f noise in thermo EMF of intrinsic and extrinsic semiconductors","authors":"Th.G.M. Kleinpenning","doi":"10.1016/0031-8914(74)90277-8","DOIUrl":null,"url":null,"abstract":"<div><p>1/<em>f</em> noise has been observed in the open circuit thermo e.m.f. of both intrinsic germanium and extrinsic germanium and silicon. The experimental results can be explained only by assuming that the 1/<em>f</em> noise is due to fluctuations in the mobility of free charge carriers. The 1/<em>f</em> noise behaviour of the open circuit thermo e.m.f. of intrinsic germanium is similar to the noise behaviour of the open circuit e.m.f. of concentration cells of ionic aqueous solutions.</p></div>","PeriodicalId":55605,"journal":{"name":"Physica","volume":"77 1","pages":"Pages 78-98"},"PeriodicalIF":0.0000,"publicationDate":"1974-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0031-8914(74)90277-8","citationCount":"66","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0031891474902778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 66
Abstract
1/f noise has been observed in the open circuit thermo e.m.f. of both intrinsic germanium and extrinsic germanium and silicon. The experimental results can be explained only by assuming that the 1/f noise is due to fluctuations in the mobility of free charge carriers. The 1/f noise behaviour of the open circuit thermo e.m.f. of intrinsic germanium is similar to the noise behaviour of the open circuit e.m.f. of concentration cells of ionic aqueous solutions.
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