Influence of Glycerol in Developer on Novolak-Type Positive-Tone Resist Solubility

IF 0.4 4区 化学 Q4 POLYMER SCIENCE Journal of Photopolymer Science and Technology Pub Date : 2021-06-11 DOI:10.2494/photopolymer.34.495
Shunpei Kajita, Yukiko Miyaji, H. Horibe
{"title":"Influence of Glycerol in Developer on Novolak-Type Positive-Tone Resist Solubility","authors":"Shunpei Kajita, Yukiko Miyaji, H. Horibe","doi":"10.2494/photopolymer.34.495","DOIUrl":null,"url":null,"abstract":"Photoresist is used for circuit fabrication in semiconductor devices. The material generally used for manufacturing semiconductor devices is the novolak-type positive-tone resist; however, it is necessary to minimize its line width while improving the resolution. To improve the resolution of novolak-type positive-tone resist, in this study, developers containing water-soluble organic solvents or surface-activating agents have been designed for controlling the resist solubility. The addition of glycerol, as a water-soluble organic solvent in the developer, inhibits the dissolution of the novolak resist, particularly in the unexposed area. The developer containing glycerol improves the novolak resist resolution, thereby developing a fine pattern.","PeriodicalId":16810,"journal":{"name":"Journal of Photopolymer Science and Technology","volume":"2022 28","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2021-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Photopolymer Science and Technology","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.2494/photopolymer.34.495","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}
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Abstract

Photoresist is used for circuit fabrication in semiconductor devices. The material generally used for manufacturing semiconductor devices is the novolak-type positive-tone resist; however, it is necessary to minimize its line width while improving the resolution. To improve the resolution of novolak-type positive-tone resist, in this study, developers containing water-soluble organic solvents or surface-activating agents have been designed for controlling the resist solubility. The addition of glycerol, as a water-soluble organic solvent in the developer, inhibits the dissolution of the novolak resist, particularly in the unexposed area. The developer containing glycerol improves the novolak resist resolution, thereby developing a fine pattern.
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显影剂中甘油对novolak型正音抗溶解度的影响
光刻胶用于半导体器件的电路制造。通常用于制造半导体器件的材料是诺沃拉克型正色调抗蚀剂;但是,有必要在提高分辨率的同时尽量减小其线宽。为了提高novolak型正调抗蚀剂的分辨率,本研究设计了含有水溶性有机溶剂或表面活化剂的显影剂来控制抗蚀剂的溶解度。在显影剂中加入甘油作为水溶性有机溶剂,可抑制诺沃拉克抗蚀剂的溶解,特别是在未暴露区域。含有甘油的显影剂提高了诺瓦拉克抗蚀剂的分辨率,从而显示出精细的图案。
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来源期刊
CiteScore
1.50
自引率
25.00%
发文量
0
审稿时长
4-8 weeks
期刊介绍: Journal of Photopolymer Science and Technology is devoted to the publication of articles on the scientific progress and the technical development of photopolymers.
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