K. Kjærnes, I. Hallsteinsen, R. Chopdekar, M. Moreau, T. Bolstad, Ingeborg-Helene Svenum, S. Selbach, T. Tybell
{"title":"Uniaxial Néel vector control in perovskite oxide thin films by anisotropic strain engineering","authors":"K. Kjærnes, I. Hallsteinsen, R. Chopdekar, M. Moreau, T. Bolstad, Ingeborg-Helene Svenum, S. Selbach, T. Tybell","doi":"10.1103/PhysRevB.103.224435","DOIUrl":null,"url":null,"abstract":"Antiferromagnetic thin films typically exhibit a multi-domain state, and control of the antiferromagnetic N\\'eel vector is challenging as antiferromagnetic materials are robust to magnetic perturbations. By relying on anisotropic in-plane strain engineering of epitaxial thin films of the prototypical antiferromagnetic material LaFeO3, uniaxial N\\'eel vector control is demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilises structurally monodomain monoclinic LaFeO3 thin films. The uniaxial N\\'eel vector is found along the tensile strained b axis, contrary to bulk LaFeO3 having the N\\'eel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling antiferromagnetic materials for mesoscopic device technology.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":"70 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1103/PhysRevB.103.224435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Antiferromagnetic thin films typically exhibit a multi-domain state, and control of the antiferromagnetic N\'eel vector is challenging as antiferromagnetic materials are robust to magnetic perturbations. By relying on anisotropic in-plane strain engineering of epitaxial thin films of the prototypical antiferromagnetic material LaFeO3, uniaxial N\'eel vector control is demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 and NdGaO3 substrates are used to engineer different anisotropic in-plane strain states. The anisotropic in-plane strain stabilises structurally monodomain monoclinic LaFeO3 thin films. The uniaxial N\'eel vector is found along the tensile strained b axis, contrary to bulk LaFeO3 having the N\'eel vector along the shorter a axis, and no magnetic domains are found. Hence, anisotropic strain engineering is a viable tool for designing unique functional responses, further enabling antiferromagnetic materials for mesoscopic device technology.