J. Ahmad, Asia Azhar, U. Nissar, S. H. Bukhari, Jamshaid Alam Khan, H. Abbas
{"title":"Impact of Yttrium doping on the physical properties of ErMn2O5","authors":"J. Ahmad, Asia Azhar, U. Nissar, S. H. Bukhari, Jamshaid Alam Khan, H. Abbas","doi":"10.52700/jn.v2i2.44","DOIUrl":null,"url":null,"abstract":"We have investigated the structural and electrical properties of perovskite system Er1-xYxMn2O5 (x=0, 0.2, 0.4, 0.6, 0.8 and 1.0) synthesized by sol gel method. The structural behavior is probed by the single phase formation of the compositions and orthorhombic symmetry confirmed by X-ray diffraction Rietvield analysis. The electrical behavior of the system is explained in terms of dc temperature dependent electrical resisitivity and Mott variable range hoping (VRH) which supports the semicondicting behavior and P-type polaronic conduction above room temperature.","PeriodicalId":16381,"journal":{"name":"JOURNAL OF NANOSCOPE (JN)","volume":"21 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"JOURNAL OF NANOSCOPE (JN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.52700/jn.v2i2.44","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We have investigated the structural and electrical properties of perovskite system Er1-xYxMn2O5 (x=0, 0.2, 0.4, 0.6, 0.8 and 1.0) synthesized by sol gel method. The structural behavior is probed by the single phase formation of the compositions and orthorhombic symmetry confirmed by X-ray diffraction Rietvield analysis. The electrical behavior of the system is explained in terms of dc temperature dependent electrical resisitivity and Mott variable range hoping (VRH) which supports the semicondicting behavior and P-type polaronic conduction above room temperature.
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