Evaluation of the diffusion thermoelectric power of bismuth

J.-P. Issi, J.-M. Streydio
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引用次数: 2

Abstract

The temperature dependences of the Fermi energies for electrons and holes in Bismuth are computed in the range 80–300°K, taking into account the non-parabolicity and non-ellipsoidicity of the conduction band. The partial diffusion thermoelectric powers for electrons and holes, and the total diffusion thermoelectric power in the two principal directions are then deduced. Computed values are compared with recent experimental data.

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铋的扩散热电功率的评价
考虑到导带的非抛物性和非椭球性,计算了铋中电子和空穴的费米能在80-300°K范围内的温度依赖性。推导了电子和空穴在两个主要方向上的部分扩散热电功率和总扩散热电功率。计算值与最近的实验数据进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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