{"title":"Field effect studies on MIS structures of n-type Pb0.8Sn0.2Te thin films","authors":"A.L. Dawar , K.V. Ferdinand, C. Jagadish, anil Kumar , Partap Kumar, P.C. Mathur","doi":"10.1016/0378-5963(85)90211-9","DOIUrl":null,"url":null,"abstract":"<div><p>DC conductivity and Hall coefficient studies were made on MIS structures of n-type Pb<sub>0.8</sub>Sn<sub>0.2</sub>Te thin films grown by a flash evaporation technique in the temperature range 77–400 K. The decrease in <em>R</em><sub>H</sub> with positive gate field and increase in <em>R</em><sub>H</sub> with negative gate field have been attributed to the accumulation and depletion of charge carriers due to bending of bands. Mobility-temperature data have been analyzed in terms of various scattering mechanisms.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 781-791"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90211-9","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
DC conductivity and Hall coefficient studies were made on MIS structures of n-type Pb0.8Sn0.2Te thin films grown by a flash evaporation technique in the temperature range 77–400 K. The decrease in RH with positive gate field and increase in RH with negative gate field have been attributed to the accumulation and depletion of charge carriers due to bending of bands. Mobility-temperature data have been analyzed in terms of various scattering mechanisms.
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