Mohammad M. Taheri, Triet M. Truong, S. Fields, W. Shafarman, B. McCandless, J. B. Baxter
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引用次数: 0
Abstract
Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. The measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x104 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.
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