S. Pūkienė, A. Jasinskas, V. Bukauskas, V. Agafonov, M. Kamarauskas, A. Lukša, A. Biciunas, B. Čechavičius, A. Šetkus, R. Butkutė
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引用次数: 0
Abstract
Laser diodes with parabolic and rectangular AlGa(As,Bi)/AlGaAs QWs were grown by MBE on n-GaAs(001). Operating wavelength was controlled by QW width and material composition. Laser bars processed by UV lithography were characterized by electroluminescence and I-V measurements.
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