Xiaolu Yuan, Jiangwei Liu, Jinlong Liu, Junjun Wei, B. Da, Chengming Li, Y. Koide
{"title":"Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C","authors":"Xiaolu Yuan, Jiangwei Liu, Jinlong Liu, Junjun Wei, B. Da, Chengming Li, Y. Koide","doi":"10.3390/COATINGS11040470","DOIUrl":null,"url":null,"abstract":"Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.","PeriodicalId":22482,"journal":{"name":"THE Coatings","volume":"35 1","pages":"470"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"THE Coatings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/COATINGS11040470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.
具有高热稳定性的欧姆接触对于促进高温应用的端氢金刚石(H-diamond)电子器件至关重要。本文研究了Ni/ h -金刚石在900℃退火温度下的欧姆接触特性。利用实测的电流-电压曲线和推导出的接触电阻ρC来评价接触性能的好坏。接收态和300℃退火的Ni/ h -金刚石形成肖特基触点。当退火温度提高到500℃时,Ni/ h -金刚石形成欧姆接触性质,ρC为1.5 × 10−3 Ω·cm2。当退火温度升至900℃时,ρC可低至6.0 × 10−5 Ω·cm2。认为Ni/ h -金刚石界面处Ni相关碳化物的形成促进了ρC的降低。镍金属极有希望在高达900°C的温度下用作h -金刚石基电子器件的欧姆接触电极。