{"title":"Bandgap reduction of InP and GaSb epitaxial layers containing Bi","authors":"M. K. Bhowal, T. D. Das","doi":"10.5958/2454-762X.2017.00017.8","DOIUrl":null,"url":null,"abstract":"We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.","PeriodicalId":14491,"journal":{"name":"Invertis Journal of Science & Technology","volume":"12 1","pages":"113-117"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Invertis Journal of Science & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5958/2454-762X.2017.00017.8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report on the growth of InPBi and GaSbBi epitaxial layers by liquid phase epitaxy. Photoluminescence measurements showed a bandgap reduction of 55 meV for InPBi and 24 meV for GaSbBi due to the incorporation of Bi in the III-V lattice.
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