Plasma-assisted supercritical carbon dioxide removal process for photoresist stripping applications

Yen-Ping Wang, Tsao-Jen Lin, Tai-Chou Lee
{"title":"Plasma-assisted supercritical carbon dioxide removal process for photoresist stripping applications","authors":"Yen-Ping Wang,&nbsp;Tsao-Jen Lin,&nbsp;Tai-Chou Lee","doi":"10.1016/j.jcice.2007.12.008","DOIUrl":null,"url":null,"abstract":"<div><p>Because of increasing interest in environmentally benign fabrication process, the use of dry cleaning processes to remove residues of metal, photoresists, organic moieties and particles from surfaces has grown as a research area. In this study, we designed series of systematic approaches to understand the properties of the hard-baked photoresist on glass substrates. We focused on the effects of de-bonding photoresists on the surface by using a plasma-assisted supercritical carbon dioxide removal process with various control parameters. Changes in the surface morphology of plasma de-bonded photoresists were observed and analyzed. A weight-loss method was used to evaluate quantitatively the efficiency of photoresist stripping by SCCO<sub>2</sub>. Compared to the blank experiment (SCCO<sub>2</sub> process only), the photoresist residue reduces to 14.7% from 76.3%. This study demonstrates the possibility of incorporating plasma pretreatment into the supercritical carbon dioxide removal process for photoresist stripping applications.</p></div>","PeriodicalId":17285,"journal":{"name":"Journal of The Chinese Institute of Chemical Engineers","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.jcice.2007.12.008","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Chinese Institute of Chemical Engineers","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0368165308000038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Because of increasing interest in environmentally benign fabrication process, the use of dry cleaning processes to remove residues of metal, photoresists, organic moieties and particles from surfaces has grown as a research area. In this study, we designed series of systematic approaches to understand the properties of the hard-baked photoresist on glass substrates. We focused on the effects of de-bonding photoresists on the surface by using a plasma-assisted supercritical carbon dioxide removal process with various control parameters. Changes in the surface morphology of plasma de-bonded photoresists were observed and analyzed. A weight-loss method was used to evaluate quantitatively the efficiency of photoresist stripping by SCCO2. Compared to the blank experiment (SCCO2 process only), the photoresist residue reduces to 14.7% from 76.3%. This study demonstrates the possibility of incorporating plasma pretreatment into the supercritical carbon dioxide removal process for photoresist stripping applications.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
等离子体辅助超临界二氧化碳去除光刻胶剥离应用
由于对环保制造工艺的兴趣日益增加,使用干洗工艺从表面去除金属残留物,光刻胶,有机部分和颗粒已成为一个研究领域。在这项研究中,我们设计了一系列系统的方法来了解玻璃基板上硬烤光刻胶的性能。我们利用等离子体辅助的超临界二氧化碳去除工艺,在不同的控制参数下,重点研究了脱键光阻剂对表面的影响。观察并分析了等离子体脱键光刻胶表面形貌的变化。采用失重法定量评价了SCCO2剥离光刻胶的效率。与空白实验(仅SCCO2工艺)相比,光刻胶残留从76.3%降至14.7%。这项研究证明了将等离子体预处理纳入光抗蚀剂剥离应用的超临界二氧化碳去除过程的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Editorial Board Ternary diffusion coefficients of monoethanolamine and N-methyldiethanolamine in aqueous solutions Membrane extraction in rectangular modules with external recycle Rate equations and isotherms for two adsorption models Use of surface response methodology to optimize culture conditions for iturin A production by Bacillus subtilis in solid-state fermentation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1