Carrier Concentration in Bulk Perovskite CH3NH3PbI3 Thin Films

IF 0.6 4区 工程技术 Q4 Engineering Nuclear Engineering International Pub Date : 2019-08-10 DOI:10.18034/ei.v7i2.475
C. Mosiori, M. Charles
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引用次数: 1

Abstract

Efforts are currently on going on the physics of photo electrics in methyl ammonium lead halide perovskites to unveil the secret of its success in photovoltaics. Since carrier concentration depends on impurity, temperature and other parameters of a semiconductor, herein, an attempt has been made address the relationship between these parameter and carrier concentrations. It was found out that the conventional band edge at 1.58 eV responsible for presenting a blue-shift depends on thickness, temperature and carrier concentration. Thus, in this work, the intrinsic carrier concentration was taken as the number of electrons and it was shown that the observed unusual optical band edge in CH3NH3PbI3 perovskite bulk thin films is about 1.58eV. It was concluded that the band edge is beneficial for photo electric effect by making use of its inhibited radiative recombination.
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大块钙钛矿CH3NH3PbI3薄膜中的载流子浓度
目前,人们正在努力研究甲基铵铅卤化钙钛矿的光电物理特性,以揭示其在光伏发电方面成功的秘密。由于载流子浓度取决于半导体的杂质、温度和其他参数,本文试图解决这些参数与载流子浓度之间的关系。结果表明,在1.58 eV下,引起蓝移的常规能带边缘取决于厚度、温度和载流子浓度。因此,本研究以本然载流子浓度作为电子数,结果表明CH3NH3PbI3钙钛矿块体薄膜中观察到的异常光学带边约为1.58eV。结果表明,带边利用其抑制辐射复合有利于光电效应的实现。
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来源期刊
Nuclear Engineering International
Nuclear Engineering International 工程技术-核科学技术
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