Enhancement of IBIS modeling capability in simutanous switching noise (SSN) and other power integrity related simulations - proposal, implementation, and validation
{"title":"Enhancement of IBIS modeling capability in simutanous switching noise (SSN) and other power integrity related simulations - proposal, implementation, and validation","authors":"Zhiping Yang, Syed Huq, Vinu Arumugham, I. Park","doi":"10.1109/ISEMC.2005.1513598","DOIUrl":null,"url":null,"abstract":"IBIS models are widely used in I/O related signal integrity simulations. This paper points out the problems with the present IBIS model in power integrity related simulations. A new proposal of adding some additional information to the existing IBIS standard to expand its capability in SSN and other power integrity related simulations are introduced. The processes to extract this information from transistor-level Spice model and implement the new proposal in existing IBIS tools are illustrated by using an example in HSPICE. The accuracy of the new proposed model is verified in simulations with nonideal power supply","PeriodicalId":6459,"journal":{"name":"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.","volume":"137 1","pages":"672-677"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 International Symposium on Electromagnetic Compatibility, 2005. EMC 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2005.1513598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
IBIS models are widely used in I/O related signal integrity simulations. This paper points out the problems with the present IBIS model in power integrity related simulations. A new proposal of adding some additional information to the existing IBIS standard to expand its capability in SSN and other power integrity related simulations are introduced. The processes to extract this information from transistor-level Spice model and implement the new proposal in existing IBIS tools are illustrated by using an example in HSPICE. The accuracy of the new proposed model is verified in simulations with nonideal power supply
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
