Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

J. Seebeck, T. Nielsen, P. Gartner, F. Jahnke
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引用次数: 6

Abstract

Abstract. A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
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氮基量子点系统中声子辅助载流子跃迁的量子动力学理论
摘要利用载流子与LO声子相互作用的微观理论研究了氮基半导体量子点的超快载流子动力学。结果表明,散射过程的效率与准粒子正态化直接相关。相互作用系统的电子态受到量子约束和极性耦合的共同影响。固有的静电场,典型的InGaN/ gan量子点,不限制快速散射通道。
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