Compact tunable memristor and inverse-memristor emulators with grounded passive elements

K. Bhardwaj, M. Srivastava
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Abstract

ABSTRACT The circuit-based emulation of memristor elements is becoming increasingly popular due to various advantages it offers over the physical architectures. The work reported in this paper presents the architectures of two novel circuit configurations dedicated to the realisation of an ideal memristor and a new but useful element, inverse memristor, respectively. Both presented circuit emulators are based on VDCC (Voltage Differencing Current Conveyor) active element. Over the previously reported bulky circuit emulators, the presented emulators have a significant design-related advantage since these are multiplier-less and grounded elements-based architectures. The developed circuits possess a tunability feature with respect to biasing voltage as well as the employed resistance. The mathematical description of pinch-off tuning and utilisation of inverse-memristor (for achieving better control over memristor characteristics) have been discussed with MATLAB simulations. To verify the workability of presented circuit architectures, the PSPICE environment has been chosen for simulation purpose. All the simulation results have been illustrated and discussed in detail. Later, the presented emulator circuits are developed using commercial ICs like CA3080 and AD844, and related results are described.
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具有接地无源元件的紧凑可调谐忆阻器和反忆阻器仿真器
基于电路的忆阻器元件仿真由于其提供的各种优势而越来越受欢迎。本文介绍了两种新型电路配置的结构,分别用于实现理想忆阻器和新的但有用的元件逆忆阻器。两个电路仿真器都是基于VDCC有源元件。与先前报道的笨重电路仿真器相比,所提出的仿真器具有显著的设计相关优势,因为它们是无乘法器和基于接地元件的架构。所开发的电路在偏置电压和所使用的电阻方面具有可调谐特性。用MATLAB仿真讨论了掐断调谐的数学描述和反向忆阻器的利用(为了更好地控制忆阻器特性)。为了验证所提出的电路架构的可操作性,选择PSPICE环境进行仿真。对所有的仿真结果进行了详细的说明和讨论。随后,利用商用集成电路CA3080和AD844开发了仿真电路,并给出了相关结果。
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来源期刊
Australian Journal of Electrical and Electronics Engineering
Australian Journal of Electrical and Electronics Engineering Engineering-Electrical and Electronic Engineering
CiteScore
2.30
自引率
0.00%
发文量
46
期刊介绍: Engineers Australia journal and conference papers.
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