DC Biasing Effects on Properties of Carbon Nanowalls by Microwave Surface-Wave Plasma Chemical Vapor Deposition and Towards Transparent Electrode

S. Ichimura, S. Ichimura, Y. Hayashi, M. Umeno
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引用次数: 1

Abstract

We synthesized carbon nanowalls on a Si substrate by microwave surface -wave plasma chemical vapor deposition. The Raman scattering ID/IG ratio was changed by altering the DC bias applied to the growth substrate and the decrease in ID/IG with increasing DC bias appears to arise from the growing length of the carbon nanowalls. The ultrasonically separated carbon nanowalls in ethanol exhibited strong 2D -peak intensity and significant graphitization. A graphite layer of approximately 10 nm grew parallel to the substrate initially, and the carbon nanowalls grew on top of that. When the nanowalls were dispersed in ethanol and spin-coated onto PET, they exhibited a transmittance of 81% and a sheet resistance of 52 kΩ/□ without reduction treatment used in the graphene oxide.
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微波表面波等离子体化学气相沉积及透明电极对碳纳米壁性能的直流偏置影响
采用微波表面波等离子体化学气相沉积的方法在硅衬底上合成了碳纳米壁。通过改变施加在生长衬底上的直流偏压,改变了拉曼散射的ID/IG比,并且随着直流偏压的增加,ID/IG的降低似乎是由于碳纳米壁的长度增加。超声分离的碳纳米壁在乙醇中表现出较强的二维峰强度和明显的石墨化。一层大约10纳米的石墨层最初与衬底平行生长,碳纳米墙生长在其上。当纳米壁分散在乙醇中并自旋涂覆在PET上时,在没有氧化石墨烯还原处理的情况下,它们的透光率为81%,片电阻为52 kΩ/□。
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