Drive-by-Microwave technologies for isolated direct gate drivers

2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications Pub Date : 2012-05-10 DOI:10.1109/IMWS.2012.6215808

S. Nagai, N. Negoro, T. Fukuda, H. Sakai, T. Ueda, T. Tanaka, N. Otsuka, D. Ueda

{"title":"Drive-by-Microwave technologies for isolated direct gate drivers","authors":"S. Nagai, N. Negoro, T. Fukuda, H. Sakai, T. Ueda, T. Tanaka, N. Otsuka, D. Ueda","doi":"10.1109/IMWS.2012.6215808","DOIUrl":null,"url":null,"abstract":"The wireless power transmission technology using an electro-magnetic resonant coupler (EMRC) has been applied to an isolated direct gate driver for GaN power switching devices. This direct gate driver with the Drive-by-Microwave technologies dose not needs an additional isolated voltage source and a photo-coupler because it can supply an isolated gate signal and signal power all together. The wireless power transmission capability in the driver is crucial for its performances, especially, regarding a switching speed and power consumption. This paper presents the potential of GaN/Sapphire direct gate driver using 5.8GHz wireless power transmission with a compact butterfly-shaped EMRC. Since the fabricated direct gate driver with the integrated EMRC drove a GaN power switching device with a fast turn on/off time, it is proved that the GaN/Sapphire HFETs is best suitable for the direct gate driver.","PeriodicalId":6308,"journal":{"name":"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications","volume":"76 1","pages":"267-270"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS.2012.6215808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

The wireless power transmission technology using an electro-magnetic resonant coupler (EMRC) has been applied to an isolated direct gate driver for GaN power switching devices. This direct gate driver with the Drive-by-Microwave technologies dose not needs an additional isolated voltage source and a photo-coupler because it can supply an isolated gate signal and signal power all together. The wireless power transmission capability in the driver is crucial for its performances, especially, regarding a switching speed and power consumption. This paper presents the potential of GaN/Sapphire direct gate driver using 5.8GHz wireless power transmission with a compact butterfly-shaped EMRC. Since the fabricated direct gate driver with the integrated EMRC drove a GaN power switching device with a fast turn on/off time, it is proved that the GaN/Sapphire HFETs is best suitable for the direct gate driver.

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用于隔离直接栅极驱动器的微波驱动技术

利用电磁谐振耦合器(EMRC)的无线电力传输技术已被应用于氮化镓功率开关器件的隔离直接栅极驱动器中。这种采用微波驱动技术的直接栅极驱动器不需要额外的隔离电压源和光耦合器，因为它可以同时提供隔离栅极信号和信号功率。驱动器的无线电力传输能力对其性能至关重要，特别是在开关速度和功耗方面。本文介绍了使用5.8GHz无线电力传输和紧凑的蝴蝶形EMRC的GaN/蓝宝石直接栅极驱动器的潜力。由于集成EMRC的直接栅极驱动器驱动具有快速开/关时间的GaN功率开关器件，证明了GaN/蓝宝石hfet最适合用于直接栅极驱动器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications

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