SOS-based pulsed power: development and applications

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358) Pub Date : 1999-06-27 DOI:10.1109/PPC.1999.825435

S. Rukin, G. Mesyats, S. Darznek, S. Lyubutin, A. Ponomarev, B. Slovikovsky, S. Timoshenkov, A. Bushlyakov, S. N. Tsiranov

{"title":"SOS-based pulsed power: development and applications","authors":"S. Rukin, G. Mesyats, S. Darznek, S. Lyubutin, A. Ponomarev, B. Slovikovsky, S. Timoshenkov, A. Bushlyakov, S. N. Tsiranov","doi":"10.1109/PPC.1999.825435","DOIUrl":null,"url":null,"abstract":"This paper summarizes recent results of the study and development of high-power nanosecond generators employing a semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on nanosecond interruption of super-density currents in semiconductor diodes (SOS-effect), are discussed. Advances with SOS-diodes, which represent new high-voltage devices for nanosecond interruption of high-density currents, are discussed. The semiconductor structure of the SOS-diodes is compared with the structure of soft- and hard-recovery high-voltage rectifier diodes. The physical processes that occur in the semiconductor structure during pumping and interruption of the current are considered. SOS-generators having the output voltage from 0.1 to 1 MV, the pulse repetition frequency from 0.1 to 5 kHz, and the average output power of units to tens of kW, are described. Application of the SOS-generators is exemplified.","PeriodicalId":11209,"journal":{"name":"Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)","volume":"17 1","pages":"153-156 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.1999.825435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

Abstract

This paper summarizes recent results of the study and development of high-power nanosecond generators employing a semiconductor opening switch. Physical processes, which underlie the operating principle of high-power opening switches based on nanosecond interruption of super-density currents in semiconductor diodes (SOS-effect), are discussed. Advances with SOS-diodes, which represent new high-voltage devices for nanosecond interruption of high-density currents, are discussed. The semiconductor structure of the SOS-diodes is compared with the structure of soft- and hard-recovery high-voltage rectifier diodes. The physical processes that occur in the semiconductor structure during pumping and interruption of the current are considered. SOS-generators having the output voltage from 0.1 to 1 MV, the pulse repetition frequency from 0.1 to 5 kHz, and the average output power of units to tens of kW, are described. Application of the SOS-generators is exemplified.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

基于sos的脉冲电源:开发与应用

本文综述了近年来采用半导体开路开关的大功率纳秒发生器的研究和开发成果。讨论了基于半导体二极管中超密度电流纳秒中断(sos效应)的大功率开路开关工作原理的物理过程。本文讨论了用于纳秒级高电压中断高密度电流的新型高压器件的研究进展。比较了高压软恢复整流二极管和硬恢复整流二极管的半导体结构。考虑了在抽运和电流中断过程中半导体结构中发生的物理过程。描述了输出电压为0.1 ~ 1mv，脉冲重复频率为0.1 ~ 5khz，单元平均输出功率为数十kW的sos发生器。举例说明了sos发生器的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Digest of Technical Papers. 12th IEEE International Pulsed Power Conference. (Cat. No.99CH36358)

自引率

0.00%

发文量