Temperature-dependent amplified spontaneous emission (ASE) threshold in phase-stable 3D perovskite films

Abstract

Continuous-wave (CW) lasing and amplified spontaneous emission (ASE) in 3D perovskite films has only been demonstrated at cryogenic temperatures. To understand the temperature limits of CW ASE, we investigate the carrier dynamics and determine the bimolecular and Auger recombination constants from 80 K up to 290 K in phase-stable triple cation perovskites. The bimolecular rate coefficient decreases with increasing temperature, whereas the Auger rate coefficient remains unchanged from cryogenic to room temperature. Above 250 K, at the ASE threshold carrier density, Auger recombination dominates the carrier dynamics and thus limits the lasing operation. At lower temperatures, below 250 K, the dominant effects leading to an increased ASE threshold with temperature are the decrease in the radiative recombination rate and the increased energy dilution of the charge carriers. Both of these effects reduce the rate of spontaneous emission into the ASE band.