{"title":"Analysis of Shubnikov-De Haas Oscillations in HgSe","authors":"G. Hein","doi":"10.1002/PSSB.2221270122","DOIUrl":null,"url":null,"abstract":"For the description of beating effects and of the angular dependence of Shubnikov-De Haas oscillations (SDH) of the narrow-gap semiconductor HgSe, a method is developed which can be used to estimate parameters from measurements of the transverse SDH effect. Also the influence of quadratic terms in the energy versus magnetic induction relation of the Landau levels can be studied. \n \n \n \nZur Beschreibung von Schwebungseffekten und der Winkelabhangigkeit von Shubnikov-De Haas-Oszillationen (SDH) des Zero-Gap-Halbleiters HgSe wird eine Methode entwickelt, die es gestattet, auf Messungen des transversalen SDH-Effektes ein Parameterschatzverfahren anzu-wenden. Ebenso kann der Einflus von quadratischen Termen in der Abhangigkeit der Energie von der magnetischen Induktion der Landauniveaus untersucht werden.","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1985-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Tue, January 11, 2022","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSB.2221270122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
For the description of beating effects and of the angular dependence of Shubnikov-De Haas oscillations (SDH) of the narrow-gap semiconductor HgSe, a method is developed which can be used to estimate parameters from measurements of the transverse SDH effect. Also the influence of quadratic terms in the energy versus magnetic induction relation of the Landau levels can be studied.
Zur Beschreibung von Schwebungseffekten und der Winkelabhangigkeit von Shubnikov-De Haas-Oszillationen (SDH) des Zero-Gap-Halbleiters HgSe wird eine Methode entwickelt, die es gestattet, auf Messungen des transversalen SDH-Effektes ein Parameterschatzverfahren anzu-wenden. Ebenso kann der Einflus von quadratischen Termen in der Abhangigkeit der Energie von der magnetischen Induktion der Landauniveaus untersucht werden.
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