Electrical resistivity of fatigued copper crystals

Z.S. Basinski, S.J. Basinski
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引用次数: 35

Abstract

Measurements made during fatigue at very low temperatures show that electrical resitivity saturates with the flow stress. The net crystal defect content therefore reaches an equilibrium value. Isochronal anneal of the fatigued crystals showed no reduction of resistivity below 80 K, and <4% reduction at 100 K. The fundamental fatigue mechanism operating at low temperature is thus unlikely to involve point defect recovery processes. The resistivity then decreases with increasing anneal temperature; at 300 K ≈40% remains. There is no correlation between resistivity anneal data and PSB profile shapes. Dislocation density in PSB walls, calculated from resistivity, exceeds that for which description in dislocation terms is valid; the material is dislocation-saturated. Such PSB wall material should behave as a perfect sink for dislocations, providing a natural explanation for fatigue saturation.

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疲劳铜晶体的电阻率
在极低温度下进行的疲劳测量表明,电阻率随流动应力饱和。因此,净晶体缺陷含量达到一个平衡值。对疲劳晶体进行等时退火,其电阻率在80 K以下没有降低,在100 K时降低了4%。因此,在低温下运行的基本疲劳机制不太可能涉及点缺陷恢复过程。电阻率随退火温度的升高而降低;300 K≈40%。电阻率退火数据与PSB剖面形状之间没有相关性。根据电阻率计算的PSB壁中的位错密度超过了位错描述的有效值;这种材料是位错饱和的。这种PSB壁材应该表现为位错的完美汇,为疲劳饱和提供了自然的解释。
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