J. Sutter, P. Tockhorn, P. Wagner, K. Jäger, A. Al‐Ashouri, B. Stannowski, S. Albrecht, C. Becker
{"title":"Periodically Nanostructured Perovskite/Silicon Tandem Solar Cells with Power Conversion Efficiency Exceeding 26%","authors":"J. Sutter, P. Tockhorn, P. Wagner, K. Jäger, A. Al‐Ashouri, B. Stannowski, S. Albrecht, C. Becker","doi":"10.1109/PVSC43889.2021.9518715","DOIUrl":null,"url":null,"abstract":"The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.","PeriodicalId":6788,"journal":{"name":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","volume":"16 1","pages":"1034-1036"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC43889.2021.9518715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The power conversion efficiency (PCE) of perovskite/silicon tandem solar cells (PSTSCs) is expected to increase with optimized light management. In this work, we report on PSTSCs containing nanostructures enabling PCEs exceeding 26%. A hexagonal sinusoidal nanostructure with 750nm period was used. The structure was transferred into silicon by nanoimprint lithography and reactive ion etching. Perovskite top cells were deposited by spin-coating resulting in a full coverage of the nanostructure. PSTSC comprising these nanostructures yielded a steady-state PCE of 26.1% and a short-circuit current density of 19.5mA·cm−2.
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