Md Zahangir Alom, Md. Soyaeb Hasan, Md Rafiqul Islam, I. Mehedi, A. Dobaie
{"title":"Estimation of minority carrier lifetime in InGaN single junction solar cell","authors":"Md Zahangir Alom, Md. Soyaeb Hasan, Md Rafiqul Islam, I. Mehedi, A. Dobaie","doi":"10.1109/CEEE.2015.7428271","DOIUrl":null,"url":null,"abstract":"The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.","PeriodicalId":6490,"journal":{"name":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","volume":"24 1","pages":"257-260"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference on Electrical & Electronic Engineering (ICEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEEE.2015.7428271","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.
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