Reliability Mechanisms of the Ultrathin-Layered BaTiO3-based BME MLCC

IF 13.5 2区 化学 Q1 CHEMISTRY, PHYSICAL 物理化学学报 Pub Date : 2024-01-01 DOI:10.3866/PKU.WHXB202304015
Chaoqiong Zhu , Ziming Cai , Peizhong Feng , Weichen Zhang , Kezhen Hui , Xiuhua Cao , Zhenxiao Fu , Xiaohui Wang
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Abstract

Currently, the world is at the intersection of the energy and computer revolutions. The electronic information industry, driven by the fields of 5G communication, smartphones, and new energy vehicles, is booming and has become an important pillar of the economic market. Multilayer ceramic capacitors (MLCC), which are passive electronic components with the highest market share, are one of the key products that require breakthroughs in key technologies in the basic electronic component industry, with wide applications in automotive electronics, power grid frequency modulation, aerospace, and other fields. With the trend of miniaturization and thin lamination, the thickness of the dielectric layer in the MLCC is decreasing continuously, whereas the electric field on the single dielectric layer is increasing significantly when the MLCC is applied under the same voltage, particularly for the ultrathin-layered MLCC served under medium/high voltage. Consequently, the reliability of MLCC has become a key product quality indicator. In this study, the deterioration mechanism of ultrathin-layer MLCC is systematically studied via accelerated aging tests, high-temperature impedance spectroscopy, and leakage current tests. During the accelerated aging test, the ceramic dielectrics degrades under the applied strict electric field and temperature, and the oxygen vacancies gradually migrate in grains and transgranularly, finally accumulating near the cathode, as observed by transmission electron microscopy. Consequently, a semiconducting layer with poor insulation performance near the cathode is formed, and the barrier height at the interface is reduced. Based on the results of the high-temperature impedance spectroscopy and leakage current test, the activation energy at the grain boundary and dielectric-electrode interface decreases, and the leakage current density increases significantly for the aged MLCC. The formation of an oxygen-vacancy-enriched semiconducting layer is a great threat to the reliability of MLCC, particularly under the trend of developing increasingly thinner dielectric layers. Therefore, inhibiting the migration and enrichment of oxygen vacancies is a top priority for ensuring the reliability of MLCC. To improve the reliability of ultrathin-layered MLCC, the oxygen vacancy concentration in ceramic dielectrics should be reduced, the activation energy required for its migration should be increased, and the Schottky barrier at the interface should be improved. All these results provide a powerful guide for the design of ultrathin-layered MLCC dielectric materials, which is expected to promote the upgrade iteration of high-end MLCC.
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超薄层batio3基BME MLCC的可靠性机制
目前,世界正处于能源革命和计算机革命的交汇处。在5G通信、智能手机、新能源汽车等领域的带动下,电子信息产业蓬勃发展,已成为经济市场的重要支柱。多层陶瓷电容器(MLCC)是市场占有率最高的无源电子元件,是基础电子元件行业需要突破关键技术的关键产品之一,在汽车电子、电网调频、航空航天等领域有着广泛的应用。随着微型化和薄层化的趋势,MLCC的介电层厚度不断减小,而在相同电压下,特别是在中高压下使用的超薄层MLCC,单个介电层上的电场明显增大。因此,MLCC的可靠性已成为一项重要的产品质量指标。本研究通过加速老化试验、高温阻抗谱试验和漏电流试验,系统研究超薄层MLCC的劣化机理。在加速时效试验中,透射电镜观察到,在施加严格的电场和温度作用下,陶瓷介电体降解,氧空位逐渐在晶粒中和穿晶中迁移,最终在阴极附近积累。因此,在阴极附近形成绝缘性能差的半导体层,并且降低了界面处的势垒高度。高温阻抗谱和漏电流测试结果表明,时效后的MLCC晶界和介电-电极界面活化能降低,漏电流密度显著增大。富氧半导体层的形成对MLCC的可靠性构成了很大的威胁,特别是在电介质层越来越薄的趋势下。因此,抑制氧空位的迁移和富集是保证MLCC可靠性的重中之重。为了提高超薄层MLCC的可靠性,应降低陶瓷介质中的氧空位浓度,提高其迁移所需的活化能,提高界面处的肖特基势垒。这些结果为超薄层MLCC介电材料的设计提供了有力的指导,有望推动高端MLCC的升级迭代。下载:下载高清图片(83KB)下载:下载全尺寸图片
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来源期刊
物理化学学报
物理化学学报 化学-物理化学
CiteScore
16.60
自引率
5.50%
发文量
9754
审稿时长
1.2 months
期刊介绍:
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