THz Driven Dynamics in Mott Insulator GaTa4 Se8

E. Abreu, D. Babich, E. Janod, S. Houver, B. Corraze, L. Cario, S. Johnson
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Abstract

GaTa4 Se8 is a Mott insulator known to exhibit an electric Mott transition, characterized by a drop in electrical resistivity, when an electric field larger than 1 – 10 kV/cm is applied for a few tens of microseconds using electrodes deposited on the sample. Here, we show that a resistivity drop can be induced in this material within less than a picosecond. These dynamics occur after excitation by a high field THz pump pulse and persist for a few picoseconds, well beyond the duration of the pump pulse.
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Mott绝缘子gata4se8的太赫兹驱动动力学
GaTa4 Se8是一种已知的莫特绝缘体,当使用沉积在样品上的电极施加大于1 - 10 kV/cm的电场并持续几十微秒时,其电阻率会下降,从而表现出电莫特转变。在这里,我们证明了在不到一皮秒的时间内,这种材料的电阻率可以下降。这些动力学在高场太赫兹泵脉冲激发后发生,并持续几皮秒,远远超过泵脉冲的持续时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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