Evaluation of strain sources in bond and etchback silicon-on-insulator

Abstract

The incorporation of strain is inherent in the manufacture of bond and etchback silicon-on-insulator (BESOI) substrates. In this paper, the principal sources of strain are identified and the magnitude of the strain is estimated. The strain sources discussed include dopant (boron) induced lattice contraction of the etchstop layer, differential thermal expansion, and interfacial microroughness at the time of bonding. Reduction or elimination of SOI layer degradation from some of these strain sources is possible.