Wave-function engineering in In0.53Ga0.47As/InxAl1−xAs core/shell nanowires

O. Marquardt, L. Geelhaar, O. Brandt
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Abstract

We study the electronic properties of In0.53Ga0.47As/InxAl1−xAs core/shell nanowires for light emission in the telecommunication range. In particular, we systematically investigate the influence of the In content x of the InxAl1−xAs shell and the diameter d of the In0.53Ga0.47As core on strain distribution, transition energies, and the character of the hole wave function. We show that the character of the hole state, and thus the polarization of the light emitted by such core/shell nanowires, can be easily tuned via these two experimentally accessible parameters.
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In0.53Ga0.47As/InxAl1−xAs核心/壳纳米线的波函数工程
研究了In0.53Ga0.47As/InxAl1−xAs芯壳纳米线在通信范围内发光的电子特性。特别地,我们系统地研究了InxAl1−xAs壳的In含量x和In0.53Ga0.47As芯的直径d对应变分布、跃迁能和空穴波函数特征的影响。我们表明,通过这两个实验参数可以很容易地调节空穴态的特征,从而调节这种核/壳纳米线发出的光的偏振。
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