{"title":"The noise-equivalent magnetic induction spectral density of magnetotransistors","authors":"G. Caruntu, M. Drãgulinescu","doi":"10.1109/SMICND.2005.1558824","DOIUrl":null,"url":null,"abstract":"In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for magnetotransistor structures realised in the bipolar and MOS circuits technology. By using the numerical simulation, the values of the noise-equivalent magnetic induction spectral density for different structure devices are compared and it is also emphasized the way in which choosing the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Teatro e Storia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2005.1558824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"THEATER","Score":null,"Total":0}
引用次数: 4
Abstract
In this paperwork, based on the model of dual Hall devices, it is analysed the operating conditions, and are established the noise main characteristics for magnetotransistor structures realised in the bipolar and MOS circuits technology. By using the numerical simulation, the values of the noise-equivalent magnetic induction spectral density for different structure devices are compared and it is also emphasized the way in which choosing the geometry and material properties influence on the device performances. There are also presented and described the electrical diagrams of the transducers which contain such sensors
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