400 Gb/s (40 × 10 Gb/s) ASE injection seeded WDM-PON based on SOA-REAM

Joon-Young Kim, Sang-Hwa Yoo, Sang-Rok Moon, D. C. Kim, Changhee Lee
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引用次数: 21

Abstract

We demonstrate a 400-Gb/s ASE injection seeded WDM-PON. A cost-effective SOA-REAM and FEC were utilized to enhance the BER performance. A required total seed power at OLT was 8.6 dBm with the 2nd generation FEC.
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基于SOA-REAM的400 Gb/s (40 × 10 Gb/s) ASE注入种子WDM-PON
我们演示了一个400 gb /s的ASE注入种子WDM-PON。采用具有成本效益的SOA-REAM和FEC来提高误码性能。第二代FEC在OLT时所需的总种子功率为8.6 dBm。
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