The I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 1

Image Journal of Advanced Materials and Technologies Pub Date : 2020-01-01 DOI:10.17277/amt.2020.01.pp.008-017

V. Buniatyan, H. R. Dastoyan

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Abstract

The paper presents a detailed study of the I–V characteristics of m-ferroelectric-m {Pt/BaxSt1–xTiO3/Pt (Pt/BST/Pt)} thin film structure. The Schottky barrier thermal/field assisted and Pool–Frenkel (PF) emission along with the punch-through in the central region of the film are proposed for the interpretation of experimental I–V dependence. It is shown that both the Schottky barrier thermal/-field assisted emission and Pool–Frenkel emission from the oxygen vacancies conditioned traps may take place simultaneously. The effect of electric field on the electron (hole) emission from the trapping centers, in the symmetric Pt/BST/Pt thin film structure has been considered. The analysis of the PF effect indicates that the trapping centers are activated at very high electric fields, exceeding 10 V/cm. In Part 2 of the paper, based on the results and assumptions pointed in Part 1, analytical expressions were derived for Schottky barrier thermal/-field assisted and Pool–Frenkel emission currents. The computer modeling theoretical dependencies of the I–V characteristics has been compared with the experimental measured results and obtained good agreements.

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含氧空位M-BaxSr1-xTiO3-M薄膜结构的I-V特性第1部分

本文详细研究了m-铁电-m {Pt/ BaxSt1-xTiO3 /Pt (Pt/BST/Pt)}薄膜结构的I-V特性。提出了肖特基势垒热场辅助和池- frenkel (PF)发射以及薄膜中心区域的穿孔来解释实验I-V依赖性。结果表明，氧空位条件阱的肖特基势垒热场辅助发射和池- frenkel发射可以同时发生。研究了对称Pt/BST/Pt薄膜结构中电场对捕获中心电子(空穴)发射的影响。对PF效应的分析表明，捕获中心在超过10 V/cm的高电场下被激活。在论文的第二部分中，基于第一部分的结果和假设，导出了Schottky势垒热场辅助和Pool-Frenkel发射电流的解析表达式。将计算机模拟的I-V特性的理论依赖关系与实验测量结果进行了比较，得到了较好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Image Journal of Advanced Materials and Technologies

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