RF/Analog Parameters in DMG-FinFET for Channel Material Beyond Si

Abstract

Due to the requirement in recent years, the semiconductor industry have used the channel material beyond Silicon. In this paper, a dual material gate (DMG) FinFET is designed and two different channel materials like Ge and GaAs is considered in simulation. The transfer characteristic of DMG-FinFET is compared for two different channel materials like Ge and GaAs. A comparative analysis of RF/analog parameters like transconductance (gm), output conductance (gd), gate capacitance (CGG), intrinsic gain (gm/gd), cut off frequency (ft), and gain frequency product (GFP) is also discussed. Results show that Ge DMG-FinFET has higher value of Ion/Ioff. Investigation also reveals that Ge DMG-FinFET has higher value of gm, gain (gm/gd), and ft than GaAs DMG-FinFET in weak to moderate inversion region.