Fast chemistry in ion wakes

T.A. Tombrello
{"title":"Fast chemistry in ion wakes","authors":"T.A. Tombrello","doi":"10.1016/0020-7381(83)85120-1","DOIUrl":null,"url":null,"abstract":"<div><p>The energy loss of an MeV/amu ion to the electrons of a substance can be as great as keV/Å. With such an enormous amount of energy available, it is not surprising that a wide variety of phenomena can occur. Among them are track formation and induced desorption of molecular ions. A common ingredient in models of such processes is the requirement that the electronic excitation has a sufficiently long lifetime (∼ picoseconds) that energy can be transferred to atomic motion. Recently, several new phenomena have been observed that indicate that atomic motion/chemical rearrangement can occur even when the electronic excitation is shorter lived (∼ femtoseconds). Two of these processes, which are also induced by MeV ion bombardment, are track damage in heavily doped compound semiconductors and greatly enhanced adhesion of metal films to metallic and semiconducting substrates. Neither of these effects can be easily accomodated within the existing theoretical models; thus, it is possible that an even richer variety of ion induced effects will be discovered. Speculations on the form of a new theoretical approach are presented.</p></div>","PeriodicalId":13998,"journal":{"name":"International Journal of Mass Spectrometry and Ion Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1983-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0020-7381(83)85120-1","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Mass Spectrometry and Ion Physics","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0020738183851201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

Abstract

The energy loss of an MeV/amu ion to the electrons of a substance can be as great as keV/Å. With such an enormous amount of energy available, it is not surprising that a wide variety of phenomena can occur. Among them are track formation and induced desorption of molecular ions. A common ingredient in models of such processes is the requirement that the electronic excitation has a sufficiently long lifetime (∼ picoseconds) that energy can be transferred to atomic motion. Recently, several new phenomena have been observed that indicate that atomic motion/chemical rearrangement can occur even when the electronic excitation is shorter lived (∼ femtoseconds). Two of these processes, which are also induced by MeV ion bombardment, are track damage in heavily doped compound semiconductors and greatly enhanced adhesion of metal films to metallic and semiconducting substrates. Neither of these effects can be easily accomodated within the existing theoretical models; thus, it is possible that an even richer variety of ion induced effects will be discovered. Speculations on the form of a new theoretical approach are presented.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
离子尾迹中的快速化学反应
MeV/amu离子对物质电子的能量损失可高达keV/Å。有了如此巨大的能量,各种各样的现象会发生也就不足为奇了。其中包括轨道的形成和诱导分子离子的脱附。这类过程模型的一个共同组成部分是要求电子激发具有足够长的寿命(~皮秒),以便能量可以转移到原子运动中。最近,已经观察到一些新的现象,表明即使电子激发的寿命较短(~飞秒),原子运动/化学重排也可能发生。其中两种过程也是由MeV离子轰击引起的,即重掺杂化合物半导体中的磁道损伤和金属薄膜与金属和半导体衬底的附着力大大增强。这两种效应都不能轻易地用现有的理论模型来解释;因此,有可能发现种类更丰富的离子诱导效应。对一种新的理论方法的形式进行了推测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Editorial Subject index Author index High resolution accurate mass measurements of FAB-generated ions by use of peak matching and multichannel analyzer techniques. Secondary ion mass spectrometry of low-temperature solids
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1