Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films

T. V. Tabenskaya, V. P. Ovsyannikov, E. Mazurenko
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引用次数: 3

Abstract

Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO 2 /Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA) 2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O 2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.
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低温等离子体增强CVD合成压电活性ZnO薄膜
采用等离子体增强有机金属化学气相沉积工艺,在蓝宝石和sio2 /Si衬底上制备了具有高度择优取向的ZnO压电薄膜。挥发性有机前驱体乙酰丙酮锌锌(AA) 2在Ar+ o2可控气氛下低温射频放电等离子体分解。推导并研究了制备高质量ZnO薄膜的最佳工艺条件。所得薄膜具有较高的电阻率和透明度。
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