Y. Yernaidu, Y. Parameswari, M. Madhavi, T. Prakash
{"title":"Influence of weed management practices on growth and yield attributes of mustard","authors":"Y. Yernaidu, Y. Parameswari, M. Madhavi, T. Prakash","doi":"10.5958/0974-8164.2022.00039.9","DOIUrl":null,"url":null,"abstract":"A field experiment was conducted on sandy loam soils to identify alternate weed management treatments to economically manage weeds and improve mustard growth and yield of mustard. Among tested weed management treatments, higher growth parameters, higher yield attributes (number of siliquae / plants and seeds / siliquae) and yield of mustard were observed under inter-cultivation and hand weeding twice at 15 and 30 days after seeding (DAS) which was at par with pre-emergence application (PE) of oxadiargyl 0.09 kg / ha fb inter-cultivation at 30 DAS.","PeriodicalId":13467,"journal":{"name":"INDIAN JOURNAL OF WEED SCIENCE","volume":"16 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"INDIAN JOURNAL OF WEED SCIENCE","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5958/0974-8164.2022.00039.9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A field experiment was conducted on sandy loam soils to identify alternate weed management treatments to economically manage weeds and improve mustard growth and yield of mustard. Among tested weed management treatments, higher growth parameters, higher yield attributes (number of siliquae / plants and seeds / siliquae) and yield of mustard were observed under inter-cultivation and hand weeding twice at 15 and 30 days after seeding (DAS) which was at par with pre-emergence application (PE) of oxadiargyl 0.09 kg / ha fb inter-cultivation at 30 DAS.