Embedded Ring Modulators and Switches

U. Das, Sadasivan
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引用次数: 2

Abstract

Micro embedded ring resonator electro-optic switching in InGaAsP based quantum well structures is briefly reviewed and all optic switching is presented. A 20Gbps electro-optic modulator with >12dB extinction ratio has been proposed using quantum confined stark effect tuning, for which a novel high speed coplanar-microstrip inverted ground plane transition has also been designed. All optical tuning is used to theoretically demonstrate a 20G packets/s switching with a 5dB switching ratio. The fabricated micro embedded ring resonator ring using e-beam lithography and Al lift off mask has been demonstrated and the measured device spectrum is found to match well with the simulated results.
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嵌入式环形调制器和开关
简要介绍了基于InGaAsP量子阱结构的微嵌入式环形谐振器电光开关,并介绍了所有的光开关。利用量子限制斯塔克效应调谐提出了消光比>12dB的20Gbps电光调制器,并为此设计了一种新型的高速共面-微带倒接平面过渡。全光调谐用于理论上演示具有5dB交换比的20G分组/s交换。利用电子束光刻技术和Al提离掩模制备了微嵌套环形谐振环,测量的器件光谱与仿真结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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